Semiconductor Interfaces: Formation and Properties

(ii) Fine characterization down to the atomic scale using recently devel- oped, powerful techniques such as scanning tunneling microscopy, high reso- lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure.

(ii) Caracterizare fina pana la scara atomica folosind tehnici puternice dezvoltate recent, cum ar fi microscopie de scanare prin tunel, microscopie electronica cu transmisie de rezolutie ridicata, difractie cu raze X cu incidenta privitoare, unde stationare cu raze X, raze X extinse de suprafata structura fina de absorbtie si structura fina de pierdere de energie extinsa la suprafata